SODDB4 [BL Galaxy Electrical]

SURFACE MOUNT RECTIFIER; 表面贴装整流器


型号：	SODDB4
厂家：	BL Galaxy Electrical
描述：	SURFACE MOUNT RECTIFIER 表面贴装整流器
文件：	总2页 (文件大小：106K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BLGALAXY ELECTRICAL

SODDB3 、 SODDB4

SURFACE MOUNT

RECTIFIER

V_BO: 28 -- 45 V

FEATURES

SOD-123FL

◇The three layer,two terminal,axial lead,

hermetically sealed diacs are designed specifically

for triggering thyristors. They demonstrate low

breakover current at breakover voltage as

they withstand peak pulse current. The breakover

symmetry is within three volts.These diacs are

intended for use in thyrisitors phase control,

circuits for lamp dimming,universal motor speed

control,and heat control.

1.8 0.1

1.0 0.2

2.8 0.1

0.05 0.30

0.98 0.1

0.60 0.25

MECHANICAL DATA

◇ Case:JEDEC SOD-123FL,molded plastic over

passivated chip

◇ Weight: 0.006 ounces, 0.02 gram

3.7 0.2

ABSOLUTE RATINGS

Parameters

SODDB3

SODDB4

UNITS

Device marking code

Power dissipation on printed

circuit (L=10mm) T_A= 50 ℃

150

2.0

Repetitive peak on-state current

I_TRM

tp=20µs, f=120Hz

T_j

T_STG

- 40 --- + 125

Operating junction temperature

Storage temperature

℃

ELECTRICAL CHARACTERISTICS

Parameters

Test Conditions

UNITS

SODDB3

SODDB4

Min

Typ

C=22nF^**

See FIG.1

Breakover voltage ^*

V_BO

Max

|+V_BO|-

|-V_BO|

C=22nF**

See FIG.1

Breakover voltage symmetry

Dynamic breakover voltage *

Max

± 3.0

∆I =(I_BO

→

|±∆V|

I_F=10mA)

See FIG.1

Min

5.0

V_O

I_BO

t_r

See FIG.2

C=22nF**

See FIG.3

V_R=0.5V_BO

5.0

100

1.5

Output voltage *

Breakover current *

Rise time^*

Min

Max

Typ

Max

µA

µs

µA

Leakage current ^*

I_R

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NOTE: * Electrical characteristics applicable in both forward and reverse directions.

** Connected in parallel with the devices.

BLGALAXY ELECTRICAL

Document Number 0280061

RATINGS AND CHARACTERISTIC CURVES

SODDB3.SODDB4

FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE

FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE

+IF

10mA

10k

500k

D.U.T

IBO

220V

60Hz

R=20

-V

0.1

0.5VBO

VBO

-IF

FIG.4--POWER DISSIPATION VERSUS AMBIENT

TEMPERATURE (MAXIMUM VALUES)

FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A

P(mW)

160

140

120

90%

100

10%

Tamb(^oC)

10 20 30 40 50 60 70 80 90 100 110 120 130

FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION

TEMPERATURE(TYPICAL VALUES)

FIG.6--PEAK PULSEE CURRENT VERENT VERSUS

PULSE DURATION(MAXIMUM VALUES)

I_TRM(A)

VBO(TJ)

VBO(TJ=25

)

1.08

1.06

1.04

f=100Hz

TJ(

)

TJinitial=25

0.1

tp(mS)

1.02

1.00

0.01

100

1000

10000

100

125

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BLGALAXY ELECTRICAL

Document Number 0280061